发明名称 METHOD AND SYSTEM FOR MONITORING STATE OF PLASMA CHAMBER
摘要 The system can evaluate the processing characteristic reliably even if contamination is increased as the time passes. Provided is the monitoring method of the plasma chamber. A step is for measuring the optical characteristic of the plasma generated in the plasma chamber having a window in the predetermined measurement wavelength band(S10). A step is for extracting a processing state index from the measured optical characteristic(S30). A step is for determining the state of the plasma chamber by analyzing the extracted processing state (S50). The optical characteristic of the plasma, the transmittance of the light passing through the window is measured in the wavelength band having independence of wavelength.
申请公布号 KR20080099695(A) 申请公布日期 2008.11.13
申请号 KR20070045570 申请日期 2007.05.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAI, KEUN HEE;KIM, YONG JIN
分类号 H01L21/3065;H01L21/203;H01L21/205 主分类号 H01L21/3065
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