| 摘要 |
<p>A non-volatile memory device and a manufacturing method thereof are provided to prevent the difficulty of the gate etch processing by the aspect ratio and the device' defects. The non-volatile memory device comprises the device isolation film having the protrusion on the substrate; the floating gate isolated between the protrusion of the element isolation film(106); the tunneling insulating layer formed between the floating gate and substrate(105); the dummy pattern formed on the protrusion of the device isolation film; the dielectric film formed on the floating gate(110), isolated between the dummy pattern.</p> |
