| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial film having a uniform composition, superior crystal orientation and a large area, and its manufacturing method, to provide a piezoelectric element and a ferroelectric element having a single orientational crystal structure, superior characteristics and large areas by using the epitaxial film having superior lattice matching as a buffer layer to a Si substrate, and their manufacturing methods, and a large liquid discharge head having superior liquid discharging performance. <P>SOLUTION: The Si substrate having an SiO<SB>2</SB>layer with a film thickness of 1.0 nm or larger to 10 nm or smaller on a surface is heated by the use of a metal target represented by the following composition formula (1): yA(1-y)B (in which A is element including rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or larger to 0.20 or smaller). On the substrate, the epitaxial film represented by the following composition formula (2): xA<SB>2</SB>O<SB>3</SB>-(1-x)BO<SB>2</SB>(in which A and B are the same metal elements as A and B of the formula (1), and x is a numeric value of 0.010 or larger to 0.035 or smaller) is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
