SEMICONDUCTOR EPITAXIAL WAFER, AND FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor epitaxial wafer which can simultaneously suppress leakage current and an electron trapping phenomenon, and to provide a field effect transistor.

SOLUTION: The semiconductor epitaxial wafer is provided with a seed layer (2) formed on a substrate (1), a first nitride semiconductor layer (3) formed on the seed layer (2) and a second nitride semiconductor layer (4) which is formed on the first nitride semiconductor layer (3) and whose electron affinity is smaller than the first nitride semiconductor layer (3). Silicon concentration in the first nitride semiconductor layer (3) is within a range of 1×1014cm-3to 5×1016cm-3.

COPYRIGHT: (C)2009,JPO&INPIT