| 摘要 |
PROBLEM TO BE SOLVED: To correctly measure an amount of crystal defects in a silicon board. SOLUTION: Following processes are carried out in a sequential order: (1) a process (S2) of preparing a silicon substrate 10 in which the crystal defects are formed; (2) a process (S4) of removing a nature oxide film 14 formed in the silicon substrate 10; (3) a process (S6) of arranging the silicon substrate 10 in hydrogen gas atmosphere; (4) a process (S8) of cleaning the front surface 12a of the silicon substrate 10 by ammonia hyperhydration; and (5) a process (S10) of measuring an amount of hydrogen contained in the silicon substrate 10 to calculate the amount of the crystal defects. COPYRIGHT: (C)2009,JPO&INPIT
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