| 摘要 |
PROBLEM TO BE SOLVED: To break trade-off between an on-resistance and a gate threshold voltage. SOLUTION: The semiconductor device 10 includes a semiconductor lower layer 22, a first impurity diffusion control film 24a, a third impurity diffusion control film 24c, a semiconductor upper layer 26, a drain region 31 provided to a part of the semiconductor upper layer 26 on the first impurity diffusion control film 24a, a source region 35 provid to a part of the semiconductor upper layer 26 on the third impurity diffusion control film 24c, and a gate electrode 34 opposed to the semiconductor upper layer 26 between the drain region 31 and the source region 35. A p-type impurity in the semiconductor upper layer 26 is thin on the first impurity diffusion control film 24a and the third impurity diffusion control film 24c, but thick on the second region 22b of the semiconductor lower layer 22. COPYRIGHT: (C)2009,JPO&INPIT
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