| 摘要 |
PROBLEM TO BE SOLVED: To provide compound semiconductor manufacturing equipment which can reduce a cost by improving the use efficiency of materials and improving productivity by shortening a growth time, in the manufacturing of an epitaxial wafer by metal organic chemical vapor deposition. SOLUTION: The compound semiconductor manufacturing equipment is metal organic chemical vapor deposition equipment for growing a compound semiconductor epitaxial layer on a substrate, and has a disc-like susceptor as part of an upper wall for forming a growth gas channel and also has a facing plate which faces the susceptor and constitutes the lower wall of the growth gas channel. A plurality of substrates are concentrically disposed in the susceptor with growth planes of the substrates faced toward the growth gas channel. A growth gas is introduced from a portion of the facing plate facing the center of the susceptor, and exhausted toward the outside of the susceptor. A flow rate of the growth gas is set to 15-80 NL/min and the height of the growth gas channel is controlled to 1-30 mm. COPYRIGHT: (C)2009,JPO&INPIT
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