Eutectic bonding of semiconductor devices - with aluminium -germanium or aluminium-germanium-zinc

摘要

Eutectic bonding of semiconductor devices to supports e.g. metal header, heat sinks, ceramic substrates etc. using Al-Ge (45:55 wt. %) mp. pt. 424 degrees C or Al-Ge-Zn (20:23:57 wt. %) m. pt. 370 degrees C. The alloys are applied to the semiconductor as a separate layers of Ge-Al, or Al-Ge-Al in quantities adding up to the eutectic compsn. Alternatively a Ga rich alloy is applied to the semiconductor plus an Al layer on the support. Bonding is carried out at 450-475 pref. 460 degrees C (Al-Ge) or 420 degrees C (Al-Ge-Zn) in an inert atmos. whilst lightly scrubbing the components together. Rigid, stable bonds are formed.