发明名称 PLATING FILM DEPOSITION APPARATUS AND METHOD FOR CONTROLLING FILM DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a plating film deposition apparatus which can maintain the bottom-up amount in wiring or the amount of impurities contained in a plating film at a constant value when groove wiring or the like is deposited by plating; and to provide a method for controlling film deposition. SOLUTION: The plating film deposition apparatus 10 is equipped with: a plating tank 12 for depositing a Cu film on the surface of a substrate; a plating solution tank 16 for circulating a plating solution between the plating tank 12 and itself; a chemical solution supply section 18 for replenishing a chemical solution or the like containing a component constituting the plating solution to the plating solution tank 16; a plating solution analysis section 20 for analyzing the concentrations of prescribed components contained in the plating solution practically used when the plating film is deposited; and a film deposition control section 22 for controlling the operation of the plating film deposition apparatus 10. The film deposition control section 22 stores the correlation data between the state parameters of the plating solution and plating film deposition conditions for controlling the bottom-up amount or the like in groove wiring to be constant, and determines film deposition conditions such as a plating current value or the like by comparing the parameters showing the state of a plating solution practically used with the correlation data. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008274313(A) 申请公布日期 2008.11.13
申请号 JP20070115599 申请日期 2007.04.25
申请人 TOSHIBA CORP 发明人 SHOJI FUMITO;KASAI YOSHIO;MURAKAMI KAZUHIRO
分类号 C25D21/12;H01L21/28;H01L21/288 主分类号 C25D21/12
代理机构 代理人
主权项
地址