Method for Chemical-Mechanical Planarization of Copper

摘要

Method for polishing copper by chemical-mechanical planarization. The method of the present invention includes dissolving MoO₃ in an oxidizing agent and deionized water to form a first slurry; filtering the first slurry; adding supplemental ceramic/metal oxide nano-particles to the first slurry after filtering, forming an aqueous slurry; introducing the aqueous slurry between the copper and a polishing pad; and, polishing the copper by moving the polishing pad and the copper relative to one another.