| 摘要 |
A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO<SUB>2 </SUB>film; forming channels and a waveguide ridge between the channels in the wafer; forming an SiO<SUB>2 </SUB>film over the wafer; forming a resist pattern covering the SiO<SUB>2 </SUB>film in the channels such that the top surfaces of the resist pattern are lower than the top surface of the deposited SiO<SUB>2 </SUB>film on the top of the waveguide ridge, the resist pattern exposing the SiO<SUB>2 </SUB>film on the top of the waveguide ridge; removing the SiO<SUB>2 </SUB>film and the deposited SiO<SUB>2 </SUB>film by wet etching, using the resist pattern as a mask, to expose a p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.
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