发明名称 |
IMPROVED PROCESS FOR PREPARING CLEANED SURFACES OF STRAINED SILICON. |
摘要 |
<p>The present invention relates to a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon (sSi) in contact with the SiGe layer, the sSi layer being exposed by etching of the SiGe layer, the method comprising the steps of: (a) a first selective etch of the SiGe layer, optionally followed by an oxidative cleaning step; (b) a rinsing step using deionized water; (c) drying; and (d) a second selective etch step. The present invention relates to a wafer comprising at least one surface layer of strained silicon (sSi), said surface layer of sSi having a thickness of at least 5 nanometres and at most 100 µm of at most 200 defects per wafer.</p> |
申请公布号 |
WO2008135804(A1) |
申请公布日期 |
2008.11.13 |
申请号 |
WO2007IB02570 |
申请日期 |
2007.05.03 |
申请人 |
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES;RADOUANE, KHALID;BALDARO, ALESSANDRO |
发明人 |
RADOUANE, KHALID;BALDARO, ALESSANDRO |
分类号 |
H01L21/311;H01L21/306 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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