| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems of a performance improving technique in microfabrication of a semiconductor element using an actinic ray or radiation, particularly KrF excimer laser light, electron beam or EUV light, and to provide a resist composition that ensures high sensitivity, high resolution and good LWR and suppresses swing due to stationary waves and resist film thickness variation on a highly reflecting substrate in the case of using KrF excimer laser light and a pattern formation method using the same. <P>SOLUTION: The resist composition includes: (A) a resin that includes a specific (meth)acrylic ester repeating unit and a specific hydroxystyrene repeating unit having a carbonyl structure in a side chain; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation. The pattern formation method using the same is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
