NON-VOLATILE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

摘要

A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.