发明名称 WORD LINE VOLTAGE BOOST SYSTEM AND METHOD FOR NON-VOLATILE MEMORY DEVICES AND MEMORY DEVICES AND PROCESSOR-BASED SYSTEM USING SAME
摘要 <p>The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.</p>
申请公布号 WO2008136826(A1) 申请公布日期 2008.11.13
申请号 WO2007US68220 申请日期 2007.05.04
申请人 MICRON TECHNOLOGY, INC.;MOSCHIANO, VIOLANTE;SANTIN, GIOVANNI;DI IORIO, ERCOLE 发明人 MOSCHIANO, VIOLANTE;SANTIN, GIOVANNI;DI IORIO, ERCOLE
分类号 G11C7/00 主分类号 G11C7/00
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