| 摘要 |
The impurity content of boric oxide for use as the encapsulant in the growth of crystals of Group III-V semiconductors by the liquid encapsulation technique is reduced by a high-temperature chemical treatment. The boric oxide is maintained for a time together with a getter substance under vacuum at a temperature at which both are molten. When the growth of crystals of GaAs and GaP is contemplated, some suitable getter substances are boron-palladium alloy, boron-platinum alloy and the pure metals or alloy combination of gallium, aluminum and silicon.
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