| 摘要 |
<p>The RC delay(RC delay) is decreased according to the gate resistance reduction by increasing the total area of the gate electrode. And the IDRIVE(current drivability) is improved. The transistor of the semiconductor device comprises a semiconductor substrate(10): a gate insulating layer(11) formed on the semiconductor substrate; a first conductive layer pattern(12) having the first width same as the gate length determined in advance, formed on the gate insulating layer; a second conductive layer pattern having the second width which is greater than the first width(13); a gate electrode having a third conductive layer pattern(14) having the third width smaller than the second width.</p> |
