METHOD FOR MANUFACTURING METAL NITRIDE LAYER, GROUP III NITRIDE SEMICONDUCTOR, METHOD OF MANUFACTURING THE SAME, AND SUBSTRATE FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride semiconductor such as a GaN semiconductor having a low dislocation density and excellent light emitting properties by utilizing a metal nitride layer formed on an SiC substrate.

SOLUTION: A metal layer is provided on the (0001)Si-surface of a¥the SiC substrate, then a metal nitride layer is formed by nitriding the metal layer, and the group III nitride semiconductor is formed on the metal nitride layer. Thereafter, the metal layer is dissolved by a chemical treatment or the like. Thereby, various semiconductor structures separated from the SiC substrate are obtained. As the metal layer, a Cr layer is used.

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