| 摘要 |
The present invention relates to a method of forming a pattern of a semiconductor device. According to the method in accordance with an aspect of the present invention, a photoresist film is formed on a semiconductor substrate. An exposure process is performed on a plurality of light transparent patterns arranged in tandem and the photoresist film corresponding between the light transparent patterns using a photomask including the light transparent patterns. A photoresist pattern is formed by performing a development process so that an opening portion of a line form is formed in the light transparent patterns and the photoresist film between the light transparent patterns. Accordingly, a uniform line pattern can be formed.
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