| 发明名称 |
Low etch pit density (EPD) semi-insulating GaAs wafers |
| 摘要 |
A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.
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| 申请公布号 |
US2008280427(A1) |
申请公布日期 |
2008.11.13 |
| 申请号 |
US20070801712 |
申请日期 |
2007.05.09 |
| 申请人 |
LIU WEIGUO;YOUNG MORRIS S;BADAWI M HANI |
发明人 |
LIU WEIGUO;YOUNG MORRIS S.;BADAWI M. HANI |
| 分类号 |
H01L21/208;C30B11/00 |
主分类号 |
H01L21/208 |
| 代理机构 |
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