LIGHT EMITTING DIODE USING SI-NANOWIRE AND METHOD OF FABRICATING THE SAME

摘要

The light emitting diode and the manufacturing method thereof are provided to produce the silicon nano wire by using the existing semiconductor manufacture. The light emitting diode(10) comprises a semiconductor substrate(11); The first and the second semiconductor protrusion(12,13) which is arranged in order to be in opposite directions in the upper side of the semiconductor substrate; the semiconductor nanowire(14) suspended between the first and the second semiconductor protrusion; the first and the second electrode(15,16) formed in the upper side of the first and the second semiconductor protrusion. A part of the semiconductor nanowire and the first semiconductor protrusion are doped with the P- type. The rest part of the semiconductor nanowire and the second semiconductor protrusion are doped with the N- type. A plurality of semiconductor nanowires is arranged between the first and the second semiconductor protrusion. The semiconductor is one among the silicon(Si), the germanium(Ge), and the iii-v compound semiconductors or the II-VI family compound semiconductor.