METHOD FOR FABRICATING DIELECTRIC LAYER WITH TANTANLUM OXIDE AND METHOD FOR FABRICATING CAPACITOR USING THE SAME

摘要

Tantalum oxide can be grown preferentially to the crystal face having a large dielectric constant, irrespective of the kind of substrate. A step is for forming the zirconium oxide layer(50~100Å) of crystalline. A step is for progressing the first thermal processing(the progressing in 350~500°C) for the crystalline increment of the zirconium oxide layer. A step is for forming tantalum oxide(60~100Å) on the heat-treated zirconium oxide layer. A step is for progressing the second thermal process(700~1000°C) for the crystallization of the tantalum oxide. The first and the second thermal process are the rapid thermal processing(Rapid Thermal Anneal) method or the furnace anneal method. One selected among N2, and Ar or vacuum is used for the second thermal anneal atmosphere.