METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

The collapse phenomenon is not generated in the aspect ratio higher than the cylinder structure by forming the capacitor maximizing the surface area of 3D columnar structure. At the same time, the high charging capacity can be secured. A step is for forming the sacrificing layer(205) having a plurality of open areas. A step is for forming the ruthenium oxidation along the internal step different of the open area. A step is for forming ruthenium the open area to fill the ruthenium oxide layer. A step is for burying the ruthenium oxide layer and ruthenium layer in the open area by a lower electrode separation process. A step is for removing the sacrificing layer. A step is for forming the bottom electrode(209A) by reducing the ruthenium oxide layer to the ruthenium layer.