| 摘要 |
The risk of the human body and environmental contamination due to use of the hydrofluoric acid can be reduced. The surface roughness and flatness of the silicon substrate can be improved. The cleaning compound and etchant are composed of the fluorinate salt etching Si or SiO2 of the silicon substrate; The reaction accelerator material consisting of the inorganic acid more than 2 kind; the reactive inhibitor consisting of the organic acid. The fluorinate salt is one or greater selected from the group consisting of the ammonium fluoride(NH4F2) ammonium hydrogenfluoride(NH4HF2) sodium fluoride(NaF) acidity sodium fluoride(NaHF2) potassium fluoride(KF) potassium fluoride acid(KHF2) barium fluoride(BaF2) and ammonium fluoride(NH4BF4). The reaction accelerator is to accelerate the etching of the fluorinate salt. The fluorinate salt is 30 parts by weight through 10. The reaction accelerator of 2 kind is the nitric acid and hydrochloric acid. The rate of the reaction accelerator of 2 kind is 1:9 or 9:1. The rate of the reaction accelerator of 2 kind is 3:7 or 7:3.
|
