| 摘要 |
<p>The laser has upper and lower guides (2, 3), a gallium arsenide substrate ensuring function of a mechanical support, and an active zone (1) formed by a stacking of thin layers made of semiconductor materials. The zone has a refractive index profile that is modulated in a manner that a refractive index periodically varies along the axis and possesses a period (lambda). The period of the profile is defined such that an integer k is greater than or equal to one, for which a parameter following a specific relation, is a complex number whose imaginary part is lower than one tenth of a real part. The semiconductor materials are chosen from gallium arsenide, aluminum indium arsenide, aluminum gallium arsenide, indium phosphide, indium arsenide, aluminum antimonide and gallium indium arsenide. The lower guide is made of indium phosphide. The upper guide is made of indium phosphide, indium gallium arsenide and aluminum gallium arsenide.</p> |
