Negative resist composition and patterning process

摘要

A negative resist composition is provided comprising a polymer comprising recurring units having formula (1), an organic solvent, a crosslinker, and an optional photoacid generator. In formula (1), R<Sup>1</Sup> and R<Sup>2</Sup> are hydrogen or methyl, m is 0 or a positive integer of 1 to 5, p and q are positive numbers. The composition has a high contrast of alkali dissolution rate before and after exposure, high resolution and good etching resistance.
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