SCHOTTKY JUNCTION TYPE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

An object of the present invention is to provide a silicon carbide Schottky barrier semiconductor device and a method for manufacturing the silicon carbide Schottky barrier semiconductor device provided with a Ta electrode as a Schottky electrode, in which the Schottky barrier height can be controlled to be a desired value in a range where power loss is minimized without increasing the n factor. A method for manufacturing a silicon carbide Schottky barrier semiconductor device according to the present invention includes the steps of depositing Ta on a crystal face of an n-type silicon carbide epitaxial film, the crystal face having an inclined angle in the range of 0° to 10° from a (000-1) C face, and carrying out a thermal treatment at a temperature range of 300 to 1200°C to form a Schottky electrode.