| 摘要 |
1,269,130. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 17 Nov., 1969 [3 Jan., 1969], No. 56104/69. Heading H1K. Ohmic contact to a semi-conductor body is made within an aperture in a surface insulating layer by a layer of silicon monoxide-chromium cermet overcoated with a metal layer. A silicon or germanium body may be provided with an apertured coating of a silicon oxide, nitride, or oxide-nitride, or of a silicate glass. The cermet is applied to the entire surface at a substrate temperature of 100-500‹C. by flash evaporation of a sintered mixture of its two components or by coevaporation of the two components from separate sources. The chromium content of the cermet may be 50-90 atomic per cent. Without breaking vacuum, a layer of copper, silver or gold is applied and may be followed by a flashed layer of chromium or titanium. After selective etching to leave a contact and track pattern (resistors are formed in the pattern by the removal of the metallic layers to leave the cermet only), the system is baked for 1 hour at 300- 500‹ C. to effect diffusion of cermet components into the semi-conductor. A single- or multiplelayer insulation is applied and apertures formed at terminal areas. Further interconnection levels may be provided. |
