发明名称 |
Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD |
摘要 |
<p>The device (100) is an optoelectronic device or transparent waveguide device that comprises a growth surface (222), a growth mask (230), an optical waveguide core mesa (240) and a cladding layer (160). The growth mask (230) is located on the semiconductor surface (222) and defines an elongate growth window (234) having a periodic grating profile (235, 236). The optical waveguide core mesa (240) is located in the growth window (240) and has a trapezoidal cross-sectional shape. The cladding layer (160) covers the optical waveguide core mesa (240) and extends over at least part of the growth mask (230). Such devices are fabricated by providing a wafer (210) comprising a growth surface (222), growing an optical waveguide core mesa (240) on the growth surface (222) by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa (240) with cladding material (160) at a second growth temperature, lower than the first growth temperature.
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申请公布号 |
EP1742314(A3) |
申请公布日期 |
2008.11.12 |
申请号 |
EP20060012066 |
申请日期 |
2006.06.12 |
申请人 |
AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD. |
发明人 |
BOUR, DAVID, P.;CORZINE, SCOTT, W. |
分类号 |
H01S5/227;G02B6/10;G02B6/13;H01S5/12;H01S5/20;H01S5/22;H01S5/32;H01S5/343 |
主分类号 |
H01S5/227 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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