DRAM DEVICE AND METHOD FOR FORMING THE SAME

摘要

The depth of the storage node contact hole for forming the storage node contact plug can become remarkably low by forming the landing contact plug which is higher than the bit line. The semiconductor substrate(102) has the gate and the first and the second junction area. The first and the second landing contact plug(108a) are formed on the first and the second junction area. A trench is formed on the first landing contact plug. The insulating layer is lower than the first and the second landing contact plug between the first landing contact plug and the first and second landing contact plugs(116). The bit line(112) is formed on the insulating layer between the second landing contact plug and in the trench in a specific direction and the storage node contact plug is formed on the second landing contact plug.