SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING EQUALIZING UNIT

摘要

A semiconductor memory device and method is provided to suppress a leakage current of a gate due to high voltage, so reducing power consumption. A semiconductor memory device and method is comprised of steps: supplying the first voltage(VCC) to the equalizing unit(220) in response to the control signal(BLKSEL)(a) when precharing; supplying the second voltage(VINT) low than the first voltage to the equalizing unit in response to the control signal(b). An equalizing unit control method is comprised of steps: Generating the first switching control signal and the first switching control signal based on the combination of the control signal and the signals related to the control signal(a); In a step of(a), supplying the first voltage to the equalizing unit in response to the control signal and the first switching control signal; In a step of(b), supplying the second voltage to the equalizing unit in response to the control signal and the first switching control signal.