| 摘要 |
<p>The adhesive force between the doped polysilicon film and the doped polysilicon film can be increased by forming the doped polysilicon film on the upper side after doping a part of the top undoped polysilicon film is doped. A step is for preparing the substrate having undoped polysilicon film(102A). A step is for forming the impurity layer(105) including dopant on the un doped polysilicon film. A step is for diffusing the undoped having the impurity layer to the undoped polysilicon film. A step is for forming the doped polysilicon film having the same conductive type as the impurity layer on undoped polysilicon film.</p> |
