| 摘要 |
<p>While not forming widely interval between the word line adjacent to the select line and the select line, the word line adjacent to the select line from being program-disturbed can be prevented. A step is for forming a plurality of select lines and a plurality of word lines on a semiconductor substrate. A step is for forming the junction area in the exposed semiconductor substrate in which the select line and word line are not formed. A step is for forming the insulating layer on the select line and word line. A step is for etching selectively the insulating layer and exposing the junction area between the word line and the select line which is adjacent to the select line. A step is for forming electric charge blocking region in the exposed junction area.</p> |
