LIGHT EMITTING DIODE HAVING ACTIVE REGION OF MULTI QUANTUM WELL STRUCTURE

摘要

The carrier overflow is reduced and the electron-hole recombination-rate can be improved. The recombination-rate can be improved by reducing the carrier overflow under the high voltage. The light emitting diode includes an n type compound semiconductor layer of the gallium nitride group(57); a P-type compound semiconductor layer(63) of the gallium nitride group; an active area of multiquantum well structure including more than three barriers(59b,59c,59d), interposed between N type and P-type compound semiconductor layers(59). The barrier in the active areas has a narrower band gap as it is near to N type compound semiconductor layer. N type compound semiconductor layer and P-type compound semiconductor layer have a wider band gap as they are near to the respective N type compound semiconductor layer.