| 摘要 |
The photoresist pattern of the line-shape is formed in a row while a plurality of contact hole patterns overlaps. Therefore, the photoresist pattern of the more fine line-shape can be formed in the photoresist flow process. A step is for coating photoresist on the semiconductor substrate. A step is for performing exposure process using the photomask(212) in which a plurality of optical pattern is arranged in line type in order to pattern the photosensitive film in line-shape. A step is for patterning the photoresist in line type by exposing photoresist area corresponding to pattern interval of photomask by light interference and diffraction in an exposure process. |
