| 摘要 |
A semiconductor memory device is provided to reduce manufacturing cost without high price laser instrument by performing fuse programming with an electric signal. The fuse region of the semiconductor memory device includes a substrate on which the first insulating layer is formed, includes phase change material(34) having the property that phase is changed with the heat energy while being formed on the first insulating layer, and includes A fuse consisting of the conductive line(32) formed in both ends of the phase change material. For example, the chalcogenide system material is used as the phase change material. The second insulating layer is formed on the fuse and the metal wiring(37) is formed on the second insulating layer. The metal wiring is connected to the conductive line through the contact(36) passing through the second insulating layer. |
