| 摘要 |
A semiconductor memory device is provided to reduce a test time by reducing a write recovery time than the normal mode time during the test having the low driving frequency. In a semiconductor memory device, a driving clock supplying unit supplies a positive or negative clock(CNT CLK, CNT CLKB) in response to the write- auto precharge signal and finish supplying a positive or negative clock when auto precharge signal is activated. A signal generation unit(100) outputs the auto precharge signal by counting a positive or negative clock as many as the number of the write-recovery time in response to write - auto precharge signal and outputs the auto precharge signal by counting a positive or negative clock by the less number of the write-recovery time in response to the test signal. |
