SEMICONDUCTOR DEVICE WITH STRAINED CHANNEL AND METHOD FOR FABRICATING THE SAME

摘要

The single crystal thin film of defect-free can be formed in epitaxial growth on the recessed surface. The diffusion of dopant can be prevented and the shallow junction depth can be maintained in the post heat treatment. A step is for forming the seed layer(27A,27B) on the recessed surface. A step is for forming the source/drain region(S/D) which forms the strained channel(C) on the seed layer. A step is for forming the capping layer on the source/drain region. A step is for forming the metal layer on the capping layer. A step is for forming the silicide layer(31) by reacting the metal layer and capping layer. A step is for forming the contact plug(32) on the silicide layer.