Method of forming trench in a semiconductor device,申请号KR20060135570-传众专利搜索

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发明名称	Method of forming trench in a semiconductor device
摘要
申请公布号	KR100868654(B1)	申请公布日期	2008.11.12
申请号	KR20060135570	申请日期	2006.12.27
申请人		发明人
分类号	H01L21/76;H01L21/762	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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