| 摘要 |
<p>A semiconductor device and a method of manufacture the same are provided to prevent an increase of the parasitic capacitance and operation speed. The semiconductor device comprises as follows. The gate insulating layer(35) is formed on a semiconductor substrate(10) including an LCD area, and a source and drain region. The nitride film is formed on the LCD area(13), and the source and drain region(15). The gate electrode(40) is formed on the gate insulating layer. The spacer(65) is formed at the side of the gate electrode. The interlayer insulating film is formed on the semiconductor substrate having the gate insulating layer, and the gate electrode and the spacer. The air gap(80) is formed between the spacer, and the semiconductor substrate and the interlayer insulating film. The nitride film is formed between the semiconductor substrate and the air gap.</p> |
