A FORMATION METHOD OF DOPED POLYSILICON THIN FILMS THROUGH A ENERGY TRANSPORT LAYER

摘要

The poly crystal-silicon layer made of the channel section of the thin film transistor is uniform grains. The thin film transistor substrate having the uniform current value to the given voltage can be manufactured. A step is for forming the amorphous silicon layer(130) on the substrate(110). A step is for performing doping on the amorphous silicon layer. A step is for forming the thin film which can absorb the energy of laser when irradiating laser on the doped amorphous silicon LPCVD(low temperature chemic al vapor deposition). A step is for converting the amorphous silicon layer to the poly silicon layer by the thermal process(ELA:Eximer Laser Annealing) having enough energy density. A step is for forming a gate line. A step is for forming a data line.