发明名称 |
METHOD FOR FABRICATING CONTACT PLUG |
摘要 |
The method for manufacturing contact plug is provided to increase the contact area and to obtain the contact plug having low resistance and to reduce contact resistance and drive current. A step is for forming a plurality of gate patterns(12) on the substrate(11). A step is for forming the first plug(14) on the substrate between the gate pattern. A step is for forming the separation film on the first plug. A step for forming the contact hole which opens first plug by etching the separation film between the gate pattern. A step is for forming the second plug on the first plug.
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申请公布号 |
KR20080098821(A) |
申请公布日期 |
2008.11.12 |
申请号 |
KR20070044161 |
申请日期 |
2007.05.07 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, YOUNG HO;SHEEN, DONG SUN;AHN, TAE HANG;SONG, SEOK PYO |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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