发明名称 METHOD FOR FABRICATING CONTACT PLUG
摘要 The method for manufacturing contact plug is provided to increase the contact area and to obtain the contact plug having low resistance and to reduce contact resistance and drive current. A step is for forming a plurality of gate patterns(12) on the substrate(11). A step is for forming the first plug(14) on the substrate between the gate pattern. A step is for forming the separation film on the first plug. A step for forming the contact hole which opens first plug by etching the separation film between the gate pattern. A step is for forming the second plug on the first plug.
申请公布号 KR20080098821(A) 申请公布日期 2008.11.12
申请号 KR20070044161 申请日期 2007.05.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, YOUNG HO;SHEEN, DONG SUN;AHN, TAE HANG;SONG, SEOK PYO
分类号 H01L21/28 主分类号 H01L21/28
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