| 摘要 |
<p>The step of the process can be decreased. The process can be facilitated. The degree of integration of the memory device formed in the single per square cell region can be enhanced. The nonvolatile memory device comprises the memory cell array including the word line(104) and bit line which are formed in the semiconductor substrate, the insulating layer formed in on semiconductor substrate including memory cell array. The conductive layer pattern formed on the insulating layer, the conductive layer pattern, the peripheral circuit for producing the operating voltage and delivering to the memory cell array, and the metal wiring for connecting the peripheral circuit, the word line and bit line.</p> |
