| 摘要 |
<p>The repetitive inscribe and erase operation property of device can be improved by compensating the damage of the active area and the tunneling oxide film contacting with the corner part of the top of the trench in the STI process. The non-volatile memory device comprises the tunneling insulating layer(104) formed on the substrate, the floating gate(105) formed on the tunneling insulating layer, the charge transfer preventing film formed in two part of the floating gate, overlapping two part of the tunneling insulating, a structure for separating adjacent floating gates.</p> |
