| 摘要 |
<p>The damage of the active area can be prevented in the post etch process by removing the step height between the central part of the sub-layer of the floating gate and the edge part using EPD mode in etching the control gate. A step is for forming first conductive film(202) and the gate insulating layer(201) on the substrate(200). A step is for forming the trench by etching the gate insulating layer and substrate. A step is for forming the element isolation film(203) to fill the trench. A step is for forming the second conductive film(204) on the first conductive film to separate. A step is for forming the dielectric film(206) on the second conductive film. A step is for forming the third conductive film(207A) on the dielectric film. A step is for etching third conductive film by the end point detecting method. A step is for etching the dielectric film exposed by etching the third conductive film. A step is for etching the first and the second conductive film.</p> |
