HALF TONE PHASE SHIFTING MASK AND METHOD FOR MANUFACTURING THE SAME

摘要

The side lobe generated in the middle part between the adjacent light-transmitting region can be prevented. The reliability and quality of the manufactured a semiconductor device can be improved. The half-tone phase shift mask comprises the transparent substrate transmitting the light; the phase inversion pattern which is formed on the transparent substrate and inverts the phase of the light; the light-shield pattern which is formed in the middle part on the phase inversion pattern and shields the light. The light-shield pattern is formed with the opaque one material. A step is for forming the phase shift layer and light-shielding layer on the transparent substrate successively. A step is for forming the first photoresist pattern at the upper part of the light-shielding layer to close only the region to be the light-shield pattern. A step is for forming the light-shield pattern by an etching process using the etching mask as the first photoresist pattern. A step is for removing first photoresist pattern. A step is for forming the second photosensitive pattern at the upper part of the phase shift layer. A step is for forming the phase inversion pattern by an etching process using the etching mask as the second photosensitive pattern. A step is for removing second photosensitive pattern.