发明名称 |
Method of manufacturing a semiconductor device with a shallow trench isolation structure |
摘要 |
In a method of manufacturing a semiconductor device with a shallow trench isolation structure, trenches are formed to extend into a semiconductor substrate. Subsequently, a first insulating film is formed to fill the trenches and to cover a whole surface of the semiconductor substrate, and then a first chemical mechanical polishing (CMP) method is carried out to remove the first insulating film such that the first insulating film is left only in the trenches. Subsequently, a second insulating film is formed to fill the trenches and to cover a whole surface of the semiconductor substrate, and a second CMP method is carried out to remove the second insulating film such that the second insulating film is left only in the trenches.
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申请公布号 |
US7449393(B2) |
申请公布日期 |
2008.11.11 |
申请号 |
US20050090839 |
申请日期 |
2005.03.25 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
SAITOU KENJI;HIDAKA KENICHI |
分类号 |
H01L21/76;H01L21/762;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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