发明名称 |
Method of fabricating semiconductor device |
摘要 |
Provided is a method of fabricating a semiconductor device, the method including: forming an insulating layer on a single crystal substrate; etching the insulating layer in a predetermined pattern to expose the surface of the single crystal substrate; depositing an amorphous material on the insulating layer and the exposed surface of the single crystal substrate; and completely melting the amorphous material on the single crystal substrate and the insulating layer using laser annealing and crystallizing the melted amorphous material. The semiconductor device has a single crystalline silicon gate on the insulating layer.
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申请公布号 |
US7449402(B2) |
申请公布日期 |
2008.11.11 |
申请号 |
US20060336802 |
申请日期 |
2006.01.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HEO SOO-BONG;CHOI CHEL-JONG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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