发明名称 Method of fabricating a composite substrate with improved electrical properties
摘要 The invention concerns a method of fabricating a composite substrate comprising at least one thin insulating layer interposed between a support substrate and an active layer of semiconductor material. The method comprises: providing a source substrate that comprises a semiconductor material and a support substrate; forming or depositing an insulating layer on the source substrate; providing recovery heat treatment of the insulating layer; providing plasma activation of a front face of the recovery heat treated insulating layer or a front face of the support substrate; molecular bonding, after the plasma activation, the front face of the insulating layer with the front face of the support substrate to form a bonded substrate; and lifting off a back portion of the source substrate from the bonded substrate to retain an active layer that comprises a remaining portion of the source substrate.
申请公布号 US7449395(B2) 申请公布日期 2008.11.11
申请号 US20060473411 申请日期 2006.06.23
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 ALLIBERT FREDERIC;KERDILES SEBASTIEN
分类号 H01L21/30;H01L21/46 主分类号 H01L21/30
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