发明名称 |
Method of fabricating a composite substrate with improved electrical properties |
摘要 |
The invention concerns a method of fabricating a composite substrate comprising at least one thin insulating layer interposed between a support substrate and an active layer of semiconductor material. The method comprises: providing a source substrate that comprises a semiconductor material and a support substrate; forming or depositing an insulating layer on the source substrate; providing recovery heat treatment of the insulating layer; providing plasma activation of a front face of the recovery heat treated insulating layer or a front face of the support substrate; molecular bonding, after the plasma activation, the front face of the insulating layer with the front face of the support substrate to form a bonded substrate; and lifting off a back portion of the source substrate from the bonded substrate to retain an active layer that comprises a remaining portion of the source substrate.
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申请公布号 |
US7449395(B2) |
申请公布日期 |
2008.11.11 |
申请号 |
US20060473411 |
申请日期 |
2006.06.23 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
ALLIBERT FREDERIC;KERDILES SEBASTIEN |
分类号 |
H01L21/30;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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