发明名称 Electrode structure and optical semiconductor element
摘要 An electrode structure includes a first conductive layer, an insulation layer that covers at least a portion of a marginal area of an upper surface of the first conductive layer and has a first sloped section that slopes down toward the upper surface of the first conductive layer, a first electrode having one end formed on the first conductive layer and another end formed on the first sloped section, a third electrode that is formed on the first electrode and the insulation layer, and covers the another end of the first electrode.
申请公布号 US7450620(B2) 申请公布日期 2008.11.11
申请号 US20060550824 申请日期 2006.10.19
申请人 SEIKO EPSON CORPORATION 发明人 SATO ATSUSHI
分类号 H01S3/00 主分类号 H01S3/00
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